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| SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA U E KTC4527F TRIPLE DIFFUSED NPN TRANSISTOR A C MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1100 800 7 3 10 1.5 40 150 -55 150 UNIT K S DIM A B C D E F R V V V A A T L L M D D G H J K L M N O P Q R S T U V V N T N T H O W Q 1 2 3 MILLIMETERS 10.30 MAX 15.30 MAX 2.70 0.30 0.85 MAX 3.20 0.20 3.00 0.30 12.30 MAX 0.75 MAX 13.60 0.50 3.90 MAX 1.20 1.30 2.54 4.50 0.20 6.80 2.60 0.20 10 25 5 0.5 2.60 0.15 F G J 1. BASE 2. COLLECTOR B 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaning Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Output Capacitance Transition Frequency Turn On Time Switching Time Storage Time Fall Time Note : hFE (1) Classification R:15 30, O:20 2001. 4. 9 Revision No : 0 ICBO IEBO ) TEST CONDITION VCB=800V, IE=0 VEB=5V, IC=0 IC=1.5A, IB1=-IB2=0.3A L=2mH, Clamped IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=5V, IC=0.2A VCE=5V, IC=1A IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 VCB=10V, f=1MHz, IE=0 VCE=10V, IC=0.2A OUTPUT 20S IB1 INPUT IB2 I B1 200 I B2 SYMBOL MIN. 800 15 8 1100 800 7 - P TYP. 60 15 - MAX. 10 10 2 1.5 40 0.5 3 0.3 UNIT A A V V V VCEX(SUS) VCE(sat) VBE(sat) hFE (1) (Note) hFE (2) BVCBO BVCEO BVEBO Cob fT ton tstg tf 40 V V V pF MHz S I B1 =0.4A , I B2 =-0.8A DUTY CYCLE < 1% = VCC =400V 1/3 KTC4527F I 2.4 COLLECTOR CURRENT I C (A) C - VCE 100 DC CURRENT GAIN h FE 250mA 200mA 150mA 100mA 80mA 60mA 50mA 40mA 30mA 20mA 10mA I B =0mA h FE - I C VCE =5V 2.0 1.6 1.2 0.8 0.4 0 0 1 2 3 4 5 6 7 50 30 10 5 3 8 9 10 1 0.01 0.03 0.1 0.3 1 3 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) VCE(sat) , V BE(sat) - I C COLLECTOR CURRENT I C (A) 5 3 SATURATION VOLTAGE V CE(sat) , VBE(sat) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01 I C =5I B I C - V BE 3 V CE =5V VBE(sat) 2 VCE(sat) 1 0 0.03 0.1 0.3 1 3 COLLECTOR CURRENT I C (A) 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE EMITTER VOLTAGE V BE (V) SAFE OPERATING AREA SWITCHING CHARACTERISTICS 10 SWITCHING TIME (S) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.1 COLLECTOR CURRENT I C (A) VCC =400V 5.I B1=-2.5. I B 2=I C 20 10 3 1 0.3 0.1 0.03 0.01 0.003 I C MAX(PULSE)* 10 I C MAX(CONTINUOUS) S 0 * S* 1m S* 10m N IO AT ER OP DC t stg t on tf 0.3 0.5 1 3 5 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.001 1 2 5 10 20 50 100 200 500 1K COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) 2001. 4. 9 Revision No : 0 2/3 KTC4527F REVERSE BIAS SAFE OPERATING AREA I B 2=-0.3A Pc - Ta COLLECTOR POWER DISSIPATION Pc (W) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 AMBIENT TEMPERATIURE Ta ( C) Tc=Ta INFINITE HEAT SINK 100 50 COLLECTOR CURRENT I C (A) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1K 2K 5K 10K COLLECTOR EMITTER VOLTAGE VCE (V) 2001. 4. 9 Revision No : 0 3/3 |
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